 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| S888T Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in low voltage UHF- and VHF- tuner with olny 5 V supply voltage and in cordless phones. Features D Integrated gate protection diodes D Low noise figure D High gain 2 1 D Only 5V supply voltage D Low input capacitance D High AGC-range G2 G1 D 94 9279 13 579 3 4 12623 S888T Marking: 888 Plastic case (SOT 143) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 S Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1/Gate 2 - source voltage Total power dissipation Channel temperature Storage temperature range Test Conditions Type Symbol Value VDS 10 ID 20 IG1/G2SM 10 VG1/G2SM 6 Ptot 160 TCh 150 Tstg -55 to +150 Unit V mA mA V mW C C Tamb 78 C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthChA Value 450 Unit K/W Document Number 85058 Rev. 3, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 1 (5) S888T Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Drain - source breakdown voltage Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Gate 1 - source leakage current Gate 2 - source leakage current Drain current Gate 1 - source cut-off voltage Gate 2 - source cut-off voltage Test Conditions ID = 10 mA, -VG1S = -VG2S = 2 V IG1S = 10 mA, VG2S = VDS = 0 IG2S = 10 mA, VG1S = VDS = 0 VG1S = 5 V, VG2S = VDS = 0 VG2S = 5 V, VG1S = VDS= 0 VDS = 4 V, VG1S = 0, VG2S = 2 V VDS = 4 V, VG2S = 2V, ID = 20 mA VDS = 4 V, VG1S = 0, ID = 20 mA Symbol Min Typ Max Unit V(BR)DS 10 V V(BR)G1SS 7 10 V V(BR)G2SS 7 10 V IG1SS 50 nA IG2SS 50 nA IDSS 1 12 mA -VGS(OFF) 1.0 V -VGS(OFF) 0.8 V Electrical AC Characteristics VDS = 4 V, ID = 10 mA, VG2S = 2 V, f = 1 MHz , Tamb = 25_C, unless otherwise specified Parameter Forward transadmittance Gate 1 input capacitance Gate 2 input capacitance Feedback capacitance Output capacitance Power g gain AGC range Noise figure g Test Conditions Symbol y21s Cissg1 Cissg2 Crss Coss Gps Gps Min 20 Typ 24 1.9 1.2 20 0.9 26 20 1.0 1.3 Max Unit mS pF pF fF pF dB dB dB dB dB VG1S= 0, VG2S= 2 V Gs = 2 mS, GL = 0.5 mS, f = 200 MHz Gs = 3.3 mS, GL = 1 mS, f = 800 MHz VG2S = 2 to -1 V, f = 800 MHz GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz DGps F F 16.5 40 www.vishay.de * FaxBack +1-408-970-5600 2 (5) Document Number 85058 Rev. 3, 20-Jan-99 S888T Vishay Telefunken Common Source S-Parameters VG2S , = 4 V , VDS/V = 4 , Z0 = 50 W, Tamb = 25_C, unless otherwise specified S11 LOG MAG dB -0.04 -0.14 -0.33 -0.54 -0.78 -1.03 -1.26 -1.51 -1.74 -1.94 -2.18 -2.34 -2.57 -0.04 -0.15 -0.35 -0.58 -0.83 -1.10 -1.36 -1.62 -1.86 -2.09 -2.34 -2.52 -2.75 S21 LOG MAG dB 5.89 5.65 5.36 4.97 4.55 4.10 3.71 3.31 2.95 2.54 2.22 2.01 1.77 7.54 7.32 7.01 6.59 6.17 5.70 5.31 4.90 4.54 4.14 3.80 3.60 3.33 S12 LOG MAG dB -58.18 -52.56 -49.71 -48.01 -47.44 -47.33 -47.59 -48.16 -48.25 -48.59 -48.17 -46.19 -43.65 -57.68 -52.06 -49.12 -47.51 -46.85 -46.64 -46.80 -47.07 -47.06 -47.29 -46.88 -45.49 -43.34 S22 LOG MAG dB -0.05 -0.11 -0.21 -0.29 -0.43 -0.54 -0.64 -0.74 -0.85 -1.01 -1.11 -1.12 -1.16 -0.08 -0.15 -0.24 -0.35 -0.48 -0.61 -0.73 -0.83 -0.94 -1.09 -1.21 -1.22 -1.26 ID/mA f/MHz 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 ANG deg -6.8 -13.7 -19.9 -26.0 -32.1 -37.6 -43.0 -48.2 -53.5 -58.3 -63.3 -68.4 -73.1 -7.4 -14.6 -21.4 -28.1 -34.4 -40.3 -46.1 -51.5 -57.2 -62.3 -67.6 -72.7 -77.6 ANG deg 169.2 157.6 146.7 136.3 126.1 116.9 108.3 100.1 92.0 84.0 76.5 69.6 62.4 169.3 157.8 147.1 136.7 126.7 117.8 109.5 101.3 93.6 85.8 78.4 71.7 64.5 ANG deg 84.4 78.7 73.5 69.5 65.4 66.7 68.5 75.6 86.7 98.3 117.8 135.8 147.4 84.3 78.8 73.9 69.8 65.8 67.6 69.3 76.0 85.6 95.0 110.8 127.1 139.2 ANG deg -3.3 -6.6 -9.7 -12.5 -15.7 -18.2 -21.0 -23.5 -26.2 -28.5 -31.2 -34.1 -36.8 -3.4 -6.8 -10.0 -13.1 -16.2 -18.7 -21.4 -24.1 -26.9 -29.1 -31.8 -34.8 -37.6 5 10 Document Number 85058 Rev. 3, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 3 (5) S888T Vishay Telefunken Dimensions in mm 96 12240 www.vishay.de * FaxBack +1-408-970-5600 4 (5) Document Number 85058 Rev. 3, 20-Jan-99 S888T Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 85058 Rev. 3, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 5 (5) |
Price & Availability of S888T
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |